Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE23169
Reexamination Certificate
active
07998805
ABSTRACT:
An electrical component has electrically conducting structures placed on an electrically isolating or semiconductive substrate and component structures sensitive to a voltage or an electrical arcing and galvanically separated from one another. To prevent an arcing between the galvanically separated component structures, the component structures are short-circuited with a shunt line having a smaller cross-section than the remaining electrical conductor tracks. The shunt lines can be burnt through by application of an electrical current at any given time, whereby a galvanic separation of the component structures is effected, if necessary, for the function of the component.
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Baier Thomas
Gawlik Waldemar
Kovacs Günter
Leidl Anton
Math Christian
Ahmed Selim
Epcos AG
Mayback Gregory L.
Mayback & Hoffman PA
Pert Evan
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