Component of protection of an integrated MOS power transistor ag

Details Component of protection of an integrated MOS power transistor ag Component of protection of an integrated MOS power transistor ag

1998-05-27

2000-05-02

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257357, 257358, 257359, 257360, 257904, 257135, 257213, 257302, 257329, 257328, 361 56, 361 91, 361111, 361 58, H01L 2362, H01L 31119, H01L 2976

Patent

active

060575778

ABSTRACT:
The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has an N-type substrate corresponding to the drain of the MOS transistor, and logic components being realized in at least one P-type well formed in the upper surface of the substrate. Each of the N-type regions connected to the ground of the logic circuit, or to a node of low impedance with respect to the ground, is in series with a resistor.

REFERENCES:
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 5099302 (1992-03-01), Pavlin
patent: 5212618 (1993-05-01), O'Neill et al.
patent: 5623387 (1997-04-01), Li et al.

Affiliated with

Also associated with

Rating

Component of protection of an integrated MOS power transistor ag does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Component of protection of an integrated MOS power transistor ag, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Component of protection of an integrated MOS power transistor ag will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1595814