Completely removal of TiN residue on dual damascence process

Details Completely removal of TiN residue on dual damascence process Completely removal of TiN residue on dual damascence process

1998-02-12

2000-08-22

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438648, 438647, 438669, H01L 214763, H01L 2144

Patent

active

061071935

ABSTRACT:
A process for completely removing TiN residue existing outside contact windows is described: electrical elements are formed on a silicon substrate, an insulating layer is then formed over the entire silicon substrate, next, the insulating layer is partially etched to form metal contact windows, a TiN barrier layer and a tungsten metal layer are then sequentially deposited overlaying the insulating layer and filling into the metal contact windows, two stage CMP process is performed to remove the metal and TiN barrier layers exposed outside the contact windows respectively, finally, an dry etching step employing HCl/Cl.sub.2 plasmas is performed to make sure there is not any TiN residues left outside contact windows.

REFERENCES:
patent: 5770519 (1998-06-01), Klein et al.
patent: 5776833 (1998-07-01), Chen et al.

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