Complementary transistors having respective gates formed...

Details Complementary transistors having respective gates formed... Complementary transistors having respective gates formed...

2005-02-22

2005-02-22

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S364000, C257S365000, C257S366000, C257S388000, C257S407000, C257S763000

Reexamination Certificate

active

06858908

ABSTRACT:
A method of forming a first and second transistor. The method provides a semiconductor surface (20). The method also forms a gate dielectric (30) adjacent the semiconductor surface. Further, the method forms a first transistor gate electrode (902) comprising a metal portion (402) in a fixed relationship with respect to the gate dielectric. Still further, the method forms a second transistor gate electrode (901) comprising a silicide (701) of the metal portion in a fixed relationship with respect to the gate dielectric.

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