Complementary sensors metrological process and method and...

Details Complementary sensors metrological process and method and... Complementary sensors metrological process and method and...

2005-07-26

2005-07-26

Patidar, Jay (Department: 2862)

Electricity: measuring and testing

Magnetic

With means to create magnetic field to test material

C324S233000, C324S243000, C324S225000

Reexamination Certificate

active

06922053

ABSTRACT:
A method for detecting a thickness of a layer of a wafer to be processed is provided. The method includes defining a plurality of sensors configured to create a set of complementary sensors proximate the wafer. Further included in the method is distributing the plurality of sensors along a particular radius of the wafer such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.

REFERENCES:
patent: 2004/0119468 (2004-06-01), Gotkis et al.

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