Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Mai, Anh D (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257SE27062
Reexamination Certificate
active
07863695
ABSTRACT:
A complementary semiconductor device includes a semiconductor substrate, a first semiconductor region formed on a surface of the semiconductor substrate, a second semiconductor region formed on the surface of the semiconductor substrate apart from the first semiconductor region, an n-MIS transistor having a first gate insulating film including La and Al, formed on the first semiconductor region, and a first gate electrode formed on the gate insulating film, and a p-MIS transistor having a second gate insulating film including La and Al, formed on the second semiconductor region, and a second gate electrode formed on the gate insulating film, an atomic density ratio Al/La in the second gate insulating film being larger than an atomic density ratio Al/La in the first gate insulating film.
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Lu et al.; “Field-Effect Transistors With LaAlO3and LaAlOxNyGate Dielectrics Deposited by Laser Molecular-Beam Epitaxy”, Applied Physics Letters, vol. 85, No. 16, pp. 3543-3545, (2004).
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Ichihara Reika
Koyama Masato
Nishino Hirotaka
Suzuki Masamichi
Takashima Akira
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Mai Anh D
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