Method for manufacturing semiconductor optical device

Details Method for manufacturing semiconductor optical device Method for manufacturing semiconductor optical device

2011-07-12

2011-07-12

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S712000, C257SE21249

Reexamination Certificate

active

07977129

ABSTRACT:
A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) on the first resin layer wherein the second resin layer has a pattern corresponding to the optical grating; etching the first resin layer using the second resin layer as a mask by a reactive ion etching that uses a mixed gas of oxygen and nitrogen where the first resin layer is cooled downto a first temperature during etching to form a protective layer on a side face of the etched first resin layer; increasing the temperature of the first resin layer upto a second temperature higher than the first temperature; etching the insulating layer using the patterned first resin layer as a mask; and forming the optical grating on the semiconductor layer by etching the semiconductor layer using the patterned insulating layer as a mask.

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Kinoshita et al.., “Etch-Profile Control of Quarter-Micron Resist Pattern Using O2Super-magnetron Plasma Added with N2Gas”, Technical Report of IEICE, SDM94-114, (Oct. 1994), pp. 21-26 with English language translation.

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