Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-04
2010-02-09
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S264000, C257S369000, C361S056000, C361S057000
Reexamination Certificate
active
07659563
ABSTRACT:
A complementary metal-oxide silicon (CMOS) image sensor includes a semiconductor layer of a first conductivity type, a plurality of pixels located in the semiconductor layer, a photoelectric converter located in each of the plurality of pixels in the semiconductor layer and includes a region doped with impurities of a second conductivity type. The CMOS image sensor further includes a deep well of a first conductivity type located in a lower position than the photoelectric converter in the semiconductor layer and has a higher impurity concentration than that of the semiconductor layer. The deep well is located only in a portion of each of the plurality of pixels.
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Dang Phuc T
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
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