Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-09
2010-02-09
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S219000, C257SE27062
Reexamination Certificate
active
07659587
ABSTRACT:
A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P well region and over said N well region. The composite silicon layer is disconnected at the STI region. Gate electrodes are then formed on the composite layer in the NMOS and PMOS regions.
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Hu Chen Ming
Lin Chun-Chieh
Yang Fu-Liang
Yeo Yee-Chia
Booth Richard A.
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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