Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2005-03-11
2008-12-30
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S019000, C257S616000, C257S382000, C257SE29104, C257SE29193, C438S933000, C438S217000, C438S194000
Reexamination Certificate
active
07470972
ABSTRACT:
A transistor may be formed of different layers of silicon germanium, a lowest layer having a graded germanium concentration and upper layers having constant germanium concentrations such that the lowest layer is of the form Si1-xGex. The highest layer may be of the form Si1-yGeyon the PMOS side. A source and drain may be formed of epitaxial silicon germanium of the form Si1-zGezon the PMOS side. In some embodiments, x is greater than y and z is greater than x in the PMOS device. Thus, a PMOS device may be formed with both uniaxial compressive stress in the channel direction and in-plane biaxial compressive stress. This combination of stress may result in higher mobility and increased device performance in some cases.
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Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Doyle Brian S.
Dang Phuc T
Intel Corporation
Tran Thanh Y
Trop Pruner & Hu P.C.
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