Complementary metal oxide semiconductor integrated circuit...

Details Complementary metal oxide semiconductor integrated circuit... Complementary metal oxide semiconductor integrated circuit...

2005-06-21

2009-08-04

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S199000, C257S204000, C257SE21637

Reexamination Certificate

active

07569443

ABSTRACT:
A complementary metal oxide semiconductor integrated circuit may be formed with a PMOS device formed using a replacement metal gate and a raised source drain. The raised source drain may be formed of epitaxially deposited silicon germanium material that is doped p-type. The replacement metal gate process results in a metal gate electrode and may involve the-removal of a nitride etch stop layer.

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