Complementary metal oxide semiconductor device fabrication...

Details Complementary metal oxide semiconductor device fabrication... Complementary metal oxide semiconductor device fabrication...

2009-01-16

2011-10-11

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S369000, C257SE21635

Reexamination Certificate

active

08034678

ABSTRACT:
According to an aspect of the present invention, there is provided a method for fabricating a semiconductor device, the method including: forming a first region and a second region in a substrate; forming the high-permittivity insulating film on the substrate in the first region and in the second region; forming a nitride film on the high-permittivity insulating film in the second region; forming a cap film on the high-permittivity insulating film in the first region and on the nitride film in the second region; forming a metal film on the cap film; and performing a heating process.

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