Complementary metal-oxide-semiconductor device and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S196000, C438S197000, C257S066000, C257S067000, C257SE21633, C257SE21663

Reexamination Certificate

active

11530480

ABSTRACT:
A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.

REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 6858506 (2005-02-01), Chang
patent: 7112495 (2006-09-01), Ko et al.
patent: 7176522 (2007-02-01), Cheng et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Complementary metal-oxide-semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Complementary metal-oxide-semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Complementary metal-oxide-semiconductor device and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3954609

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.