Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-22
2008-07-22
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S196000, C438S197000, C257S066000, C257S067000, C257SE21633, C257SE21663
Reexamination Certificate
active
07402496
ABSTRACT:
A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 6858506 (2005-02-01), Chang
patent: 7112495 (2006-09-01), Ko et al.
patent: 7176522 (2007-02-01), Cheng et al.
Cheng Po-Lun
Chiang Jih-Shun
Fan Ming-Chi
Lin Chun-An
Liu Che-Hung
Jianq Chyun IP Office
Nguyen Dao H
United Microelectronics Corp.
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