Complementary metal gate dense interconnect and method of...

Details Complementary metal gate dense interconnect and method of... Complementary metal gate dense interconnect and method of...

2011-03-22

2011-03-22

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C257SE21632

Reexamination Certificate

active

07910418

ABSTRACT:
Complementary metal gate dense interconnects and methods of manufacturing the interconnects is provided. The method comprises forming a first metal gate on a wafer and second metal gate on the wafer. A conductive interconnect material is deposited in a space formed between the first metal gate and the second metal gate to provide an electrical connection between the first metal gate and the second metal gate.

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