Complementary giant magneto-resistive memory with full-turn...

Details Complementary giant magneto-resistive memory with full-turn... Complementary giant magneto-resistive memory with full-turn...

2008-09-16

2008-09-16

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

11257327

ABSTRACT:
A magneto-resistive memory system is presented that includes a radiation-hardened and low power memory cell. The magneto-resistive memory cell includes a word line select transistor in the cell to help eliminate unselected cell disturbances. Furthermore, the magneto-resistive memory cell includes a full-turn write word line that writes true and complimentary bit values using less current than previous cell architectures. The improved memory cell may be used in a memory system with precision current drivers and auto-zero sense amplifiers in order to further lower power and improve overall system reliability.

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Reohr et al., Memories of Tommorow. Sep. 2002. IEEE Circuits & Devices Magazine.

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