Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Patent
1997-01-27
1997-12-09
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
365206, 365207, 327 51, 327 52, 327 55, G11C 700, H03F 345
Patent
active
056967268
ABSTRACT:
P channel MOS transistors P11 and P12 have their gates cross-connected to their drains. P channel MOS transistors P13 and P14 each having its gate and its drain diode-connected to each other are respectively connected in parallel to transistors P11 and P12. N channel MOS transistors N15 and N16 drive transistors P11 to P14 with current values corresponding to input signals IN and /IN. If transistors P11-P14 have the same gate length, transistors P11 and P12 have the same gate width, and transistors P13 and P14 have the same gate width, the DC amplification factor of an internal differential amplifying circuit 1100 of a first stage can be set to a desired value by the ratio of a gate width of P13 to a gate width of P11. Internal outputs from nodes to which the drains of P11 and P12 are respectively connected are input to an internal differential amplifying circuit 1200 of the following stage.
REFERENCES:
patent: 5248946 (1993-09-01), Murakami et al.
patent: 5345122 (1994-09-01), Takamoto et al.
patent: 5384503 (1995-01-01), Shu et al.
Dinh Son T.
Mitsubishi Denki & Kabushiki Kaisha
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