Compensation techniques for substrate heating processes

Details Compensation techniques for substrate heating processes Compensation techniques for substrate heating processes

2006-11-20

2009-10-06

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Radiation or energy treatment modifying properties of...

C219S390000, C219S405000, C392S418000, C432S247000

Reexamination Certificate

active

07598150

ABSTRACT:
Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.

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