Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-24
2006-10-24
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S591000, C257S407000
Reexamination Certificate
active
07125762
ABSTRACT:
A metal gate transistor may include a metal layer over a high dielectric constant dielectric layer. The dielectric layer abstracts electronegativity from said metal layer, altering its workfunction. The workfunction of the metal layer may be set to compensate for the dielectric layer abstraction.
REFERENCES:
patent: 7023064 (2006-04-01), Park et al.
Chau et al., “A Method for Making a Semiconductor Device Having a Metal Gate Electrode”, U.S. Appl. No. 10/431,166, May 6, 2003.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Kavalieros Jack
Intel Corporation
Nguyen Tuan H.
Trop Pruner & Hu P.C.
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