Compensated-well electrostatic discharge protection devices

Details Compensated-well electrostatic discharge protection devices Compensated-well electrostatic discharge protection devices

2005-03-22

2005-03-22

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000

Reexamination Certificate

active

06869840

ABSTRACT:
Electrostatic discharge (ESD) protection structures utilizing bipolar conduction are disclosed. The structures each include a parasitic p-n-p bipolar transistor (102); some of the disclosed embodiments include this transistor within a silicon-controlled-rectifier (SCR) type of ESD protection structure. A p+ doped region (116, 216, 316, 416, 516) is disposed at a surface of an n-well (112, 212, 312, 412, 512) overlying a location (115, 215, 315, 415, 515) that receives both the n-well (112, 212, 312, 412, 512) implants and also the p-well (213, 313, 413, 513) implants. Preferably, the well implants are designed to provide retrograde doping profiles. The number of net impurities is reduced, and thus the base Gummel number is lowered, at the compensated well portion (112′, 212′, 312′, 412′, 512′), resulting in improved gain for the vertical bipolar device.

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