Compartnetalized substrate processing chamber

Details Compartnetalized substrate processing chamber Compartnetalized substrate processing chamber

1994-08-23

1998-03-24

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118723E, 118729, 118733, 20429825, 156345, 414935, 414939, C23C 1600

Patent

active

057308012

ABSTRACT:
A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

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