Static information storage and retrieval – Read/write circuit – Erase
Patent
1997-09-30
1999-06-22
Nelms, David
Static information storage and retrieval
Read/write circuit
Erase
36518501, 36518529, 36518528, 365104, 365175, G11C 700
Patent
active
059149043
ABSTRACT:
A nonvolatile memory cell (600) has a read device (510), program device (515), and tunnel diode (535). A write control line (WC) is directly coupled to the tunnel diode (535). The memory cell (500) may be used to form compact arrays of memory cells to store logical data. During programming of a selected memory cell, half-select voltages are used on the write control (WC) and control gate lines (CG) for unselected memory cells to prevent disturb and minimize oxide stress.
REFERENCES:
patent: 4132904 (1979-01-01), Harari
patent: 4546454 (1985-10-01), Gupta et al.
patent: 4596938 (1986-06-01), Cartwright, Jr.
patent: 4609986 (1986-09-01), Hartmann et al.
patent: 4617479 (1986-10-01), Hartmann et al.
patent: 4628487 (1986-12-01), Smayling
patent: 4652773 (1987-03-01), Cartwright, Jr.
patent: 4677318 (1987-06-01), Veenstra et al.
patent: 4695979 (1987-09-01), Tuvell et al.
patent: 4713792 (1987-12-01), Hartmann et al.
patent: 4715014 (1987-12-01), Tuvell et al.
patent: 4742492 (1988-05-01), Smayling et al.
patent: 4829203 (1989-05-01), Ashmore, Jr.
patent: 4871930 (1989-10-01), Wong et al.
patent: 4885719 (1989-12-01), Brahmbhatt
patent: 4899067 (1990-02-01), So et al.
patent: 4912342 (1990-03-01), Wong et al.
patent: 4924119 (1990-05-01), Lee
patent: 4935648 (1990-06-01), Radjy et al.
patent: 4979146 (1990-12-01), Yokoyama et al.
patent: 5005155 (1991-04-01), Radjy et al.
patent: 5016217 (1991-05-01), Brahmbhatt
patent: 5021693 (1991-06-01), Shima
patent: 5028810 (1991-07-01), Castro et al.
patent: 5043941 (1991-08-01), Sakamoto
patent: 5097449 (1992-03-01), Cuevas
patent: 5121006 (1992-06-01), Pedersen et al.
patent: 5241224 (1993-08-01), Pedersen et al.
patent: 5247478 (1993-09-01), Gupta et al.
patent: 5260610 (1993-11-01), Pedersen et al.
patent: 5260611 (1993-11-01), Cliff et al.
patent: 5350954 (1994-09-01), Patel et al.
patent: 5353248 (1994-10-01), Gupta
patent: 5457653 (1995-10-01), Lipp
patent: 5581504 (1996-12-01), Chang
patent: 5666307 (1997-09-01), Chang
patent: 5691939 (1997-11-01), Chang et al.
patent: 5706227 (1998-01-01), Chang et al.
patent: 5736764 (1998-04-01), Chang
patent: B14617479 (1993-09-01), Hartmann et al.
Altera Corporation
Le Thong
Nelms David
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