Compact electrically erasable memory cells and arrays

Static information storage and retrieval – Read/write circuit – Erase

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Details

36518501, 36518529, 36518528, 365104, 365175, G11C 700

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active

059149043

ABSTRACT:
A nonvolatile memory cell (600) has a read device (510), program device (515), and tunnel diode (535). A write control line (WC) is directly coupled to the tunnel diode (535). The memory cell (500) may be used to form compact arrays of memory cells to store logical data. During programming of a selected memory cell, half-select voltages are used on the write control (WC) and control gate lines (CG) for unselected memory cells to prevent disturb and minimize oxide stress.

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