Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2011-07-19
2011-07-19
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
C438S386000, C438S387000, C257SE21008, C257SE21011, C257SE21017
Reexamination Certificate
active
07981756
ABSTRACT:
A process of forming a semiconductive capacitor device for a memory circuit includes forming a first capacitor cell recess and a second capacitor cell recess that are spaced apart by a capacitor cell boundary of a first height. The process includes lowering the first height of the capacitor cell boundary to a second height. A common plate capacitor bridges between the first recess and the second recess over the boundary above the second height and below the first height.
REFERENCES:
patent: 6002149 (1999-12-01), Dennison et al.
Doyle Brian
Jezewski Christopher J.
Lindert Nick
Sivakumar Swaminathan
Somasekhar Dinesh
Ghyka Alexander G
Greaves John N.
Intel Corporation
Nikmanesh Seahvosh J
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