Common plate capacitor array connections, and processes of...

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C438S386000, C438S387000, C257SE21008, C257SE21011, C257SE21017

Reexamination Certificate

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07981756

ABSTRACT:
A process of forming a semiconductive capacitor device for a memory circuit includes forming a first capacitor cell recess and a second capacitor cell recess that are spaced apart by a capacitor cell boundary of a first height. The process includes lowering the first height of the capacitor cell boundary to a second height. A common plate capacitor bridges between the first recess and the second recess over the boundary above the second height and below the first height.

REFERENCES:
patent: 6002149 (1999-12-01), Dennison et al.

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