Common-gate GaAs FET design for monolithic microwave integrated

Details Common-gate GaAs FET design for monolithic microwave integrated Common-gate GaAs FET design for monolithic microwave integrated

1982-07-06

1985-10-22

James, Andrew J.

357 22, 357 68, 357 15, H01L 2702, H01L 2980

Patent

active

045491976

ABSTRACT:
In order to provide low and exactly repeatable common lead inductance (gate lead inductance) and low feedback parasitics in a common-gate low noise amplifier, a GaAs FET connects the gate electrode to ground at various points along its width by means of an air bridge crossover structure. This structure crosses over the input (source) lines with very low capacitance. Since the gate lead inductance is low in this design, and because in monolithic form this inductance does not vary as is the case for a device grounded using bond wires, common-gate circuit stability is assured. This device preferably uses the well-known pi-gate configuration to provide low drain-gate parasitic capacitance and equal phasing to all parts of the device.

REFERENCES:
patent: 4380022 (1983-04-01), Yoder
MTT Symposium Proceedings, 1981, W. C. Petersen et al., "A Monolithic GaAs 0.1 to 10.0 GHz Amplifier", pp. 354-355.
IEEE Intn'l Solid-State Ckts. Conf., vol. 25, Feb. 11, 1982, D. B. Estreich, "A Wideband Monolithic GaAs IC Amplifier", pp. 194-195.
IEEE Intn'l Solid-State Ckts. Conf., vol. 25, Feb. 11, 1982, R. E. Lehmann et al., "10 GHz 3-Stage Monolithic 4DB Noise Fig. Amp", pp. 140-141.
MTT Symposium Proceedings, 1981, R. S. Pengelly et al., "A Comparison Between Actively and Passively Matched S-Band GaAs Mono. FET Amp", pp. 367-368.

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