Combined barrier layer and seed layer

Details Combined barrier layer and seed layer Combined barrier layer and seed layer

2005-02-08

2005-02-08

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S637000

Reexamination Certificate

active

06852618

ABSTRACT:
Methods and apparatus for forming conductive interconnect layers useful in articles such as semiconductor chips, memory devices, semiconductor dies, circuit modules, and electronic systems. The number of necessary processing steps to form conductive interconnects are reduced by removing the need to employ a seed layer interposed between the barrier layer and the conductive interconnect layer. This is accomplished in part through the electrochemical reduction of oxides on a dual-purpose layer. The present invention can be advantageously utilized to deposit copper interconnects onto tungsten.

REFERENCES:
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5456819 (1995-10-01), Lashmore et al.
patent: 5804090 (1998-09-01), Iwasaki et al.
patent: 5877069 (1999-03-01), Robinson
patent: 5893966 (1999-04-01), Akram et al.
patent: 5933758 (1999-08-01), Jain
patent: 6077412 (2000-06-01), Ting et al.
patent: 6221763 (2001-04-01), Gilton
patent: 6261954 (2001-07-01), Ho et al.
patent: 6273786 (2001-08-01), Chopra et al.
patent: 6284652 (2001-09-01), Charneski et al.
patent: 6413858 (2002-07-01), Chopra
patent: 6436257 (2002-08-01), Babas-Dornea et al.
patent: 6489235 (2002-12-01), Gilton et al.
patent: 6545357 (2003-04-01), Chopra
patent: 6555909 (2003-04-01), Lopatin et al.
patent: 6613671 (2003-09-01), Chopra et al.
patent: 6632345 (2003-10-01), Chen
patent: 20020100693 (2002-08-01), Lu et al.
patent: 20020134684 (2002-09-01), Calvert et al.
patent: 2000351622 (2000-12-01), None
Braun, Alexander.E. ,“Aluminum Persists as Copper Age Dawns”,Semiconductor Internationalvol. 22, No. 9, (Aug. 1999),58-60, 63, 64, 66.
Braun, Alexander.E. ,“Copper Electroplating Enters Mainstream Processing”,Semiconductor International, vol. 22, No. 4, (Apr. 1999),58-60, 62, 64, 66.
Dorsch, Jeff, “Applied Does Quick Turnaround on CU Process”,Electronic News(1991), (Nov. 8, 1999),36.

Affiliated with

Also associated with

Rating

Combined barrier layer and seed layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Combined barrier layer and seed layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combined barrier layer and seed layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3483774