Combination usage of noble gases for dry etching semiconductor w

Details Combination usage of noble gases for dry etching semiconductor w Combination usage of noble gases for dry etching semiconductor w

1992-02-20

1993-05-25

Weinstein, Steven

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, H01L 2100

Patent

active

052136590

ABSTRACT:
A method of dry etching a layer on a semiconductor silicon substrate wafer within a reactor comprises:

REFERENCES:
patent: 4465552 (1984-08-01), Bobbio et al.
patent: 4595452 (1986-06-01), Landau et al.
patent: 4666555 (1987-05-01), Tsang
patent: 4741799 (1988-05-01), Chen et al.
patent: 4904341 (1990-02-01), Blaugher et al.
patent: 5013398 (1991-05-01), Long et al.
patent: 5021121 (1991-06-01), Groechel et al.

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