Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2008-07-29
2008-07-29
McPherson, John A. (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S322000, C430S030000, C430S330000, C430S320000, C356S636000, C356S637000, C356S625000, C356S601000
Reexamination Certificate
active
07405032
ABSTRACT:
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) during gate formation in an integrated circuit.Systems and methods are disclosed for improving critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER, and a trim etch component that facilitates achieving and/or restoring a target critical dimension.
REFERENCES:
patent: 6561706 (2003-05-01), Singh et al.
patent: 6650422 (2003-11-01), Singh et al.
patent: 6730458 (2004-05-01), Kim et al.
patent: 6905949 (2005-06-01), Arita
patent: 7064846 (2006-06-01), Amblard et al.
patent: 7159205 (2007-01-01), Amblard et al.
Amblard Gilles
Dakshina-Murthy Srikanteswara
Singh Bhanwar
Advanced Micro Devices , Inc.
Amin Turocy & Calvin LLP
Chacko Davis Daborah
McPherson John A.
LandOfFree
Combination of non-lithographic shrink techniques and trim... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Combination of non-lithographic shrink techniques and trim..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Combination of non-lithographic shrink techniques and trim... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2813806