Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1992-01-31
1993-10-26
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Bad bit
3652257, 36523002, 36523006, 307449, 307463, G11C 700
Patent
active
052572293
ABSTRACT:
An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder, associated with each column. A plurality of redundant sense amplifiers are each associated with selected redundant columns. Each of the redundant column decoders includes a set of fuses for storing the column address responsive to which its associated redundant column is to be selected. The coupling of each redundant sense amplifier is controlled by a redundant multiplexer associated with each of the input/output terminals. Each redundant multiplexer receives the redundant column select signals from each redundant column decoder corresponding thereto, and includes fuses which indicate if its input/output terminal is to be placed in communication with its associated sense amplifier upon selection of a redundant column.
REFERENCES:
patent: 4573146 (1986-02-01), Graham et al.
patent: 4656610 (1987-04-01), Yoshida et al.
patent: 5124948 (1992-06-01), Takizawa et al.
patent: 5146429 (1992-09-01), Kawai et al.
patent: 5177743 (1993-01-01), Shimoda et al.
patent: 5195057 (1993-03-01), Kasa et al.
Hardee, et al., "A Fault-Tolerant 20 ns/375 mW 16K.times.1 NMOS Static Ram", J. Solid State Circuits, vol. SC-16, No. 5 (IEEE, 1981), pp. 435-443.
Childs, et al., "An 18 ns 4K.times.4 CMOS SRAM", J. Solid State Circuits, vol. SC-19, No. 5 (IEEE, 1984), pp. 545-551.
Sakurai, et al., "A Low Power 46 ns 256 kbit CMOS Static RAM with Dynamic Double Word Line", IEEE J. Solid State Circuits, vol. SC-19, No. 5 (IEEE, Oct. 1984) pp. 578-585.
Iyengar Narasimhan
McClure David C.
Anderson Rodney M.
Jorgenson Lisa K.
LaRoche Eugene R.
Robinson Richard K.
SGS-Thomson Microelectronics Inc.
LandOfFree
Column redundancy architecture for a read/write memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Column redundancy architecture for a read/write memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Column redundancy architecture for a read/write memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-964501