Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-05-03
2011-11-08
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S440000, C257S443000, C257S454000, C257S471000, C257S473000, C257S448000, C257S465000, C257S462000, C257S463000, C257S464000
Reexamination Certificate
active
08053853
ABSTRACT:
An image sensor device includes a semiconductor substrate having a light-sensing region, and a first and second electrode embedded within the substrate. The first and second electrode forms an array of slits, the array of slits is configured to allow a wavelength of light to pass through to the light-sensing region. A method for making an image sensor device includes providing a semiconductor substrate, forming a plurality of pixels on the semiconductor substrate, and forming a plurality of slits embedded within each of the plurality of pixels. The plurality of slits is configured to allow a wavelength of light to pass through to each of the plurality of pixels.
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Chyan Jiunn-Yih
Shiau Gwo-Yuh
Tsai Chia-Shiung
Chi Suberr
Haynes and Boone LLP
Nguyen Ha Tran T
Taiwan Semiconductor Manufacturing Company , Ltd.
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