Collimation hardware with RF bias rings to enhance sputter and/o

Details Collimation hardware with RF bias rings to enhance sputter and/o Collimation hardware with RF bias rings to enhance sputter and/o

1993-10-29

1995-07-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429808, 20429811, C23C 1434

Patent

active

054317991

ABSTRACT:
A plasma deposition system for sputter depositing material from a target onto a wafer, the system including a vacuum chamber; a platform for holding the wafer during plasma processing; a source onto which the target is mounted and for generating a plasma in the chamber during operation; an equipotential conductive plane dividing the chamber into an upper cavity in which the target is located and a lower cavity in which the wafer is located, the equipotential conductive plane permitting material sputtered from the target to pass therethrough; and an upper antenna located inside the upper cavity and surrounding the plasma, the upper antenna for coupling RF power into the source-generated plasma.

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Rossnagel et al. "Magnetron Sputter Deposition With High Levels Of Metal Ionization", Appl. Phys. Lett., vol. 63, No. 24, pp. 3285-3287, 13 Dec. 1993.

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