Cobalt titanium oxide dielectric films

Details Cobalt titanium oxide dielectric films Cobalt titanium oxide dielectric films

2005-08-31

2011-12-06

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S240000, C438S260000, C438S197000, C257SE21013, C257SE21170

Reexamination Certificate

active

08071476

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film may be structured as one or more monolayers. The cobalt titanium oxide film may be formed by atomic layer deposition.

REFERENCES:
patent: 4645622 (1987-02-01), Kock
patent: 5981350 (1999-11-01), Geusic et al.
patent: 6025225 (2000-02-01), Forbes et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6090636 (2000-07-01), Geusic et al.
patent: 6134175 (2000-10-01), Forbes et al.
patent: 6150188 (2000-11-01), Geusic et al.
patent: 6191448 (2001-02-01), Forbes et al.
patent: 6198168 (2001-03-01), Geusic et al.
patent: 6294813 (2001-09-01), Forbes et al.
patent: 6317357 (2001-11-01), Forbes
patent: 6331465 (2001-12-01), Forbes et al.
patent: 6381168 (2002-04-01), Forbes
patent: 6399979 (2002-06-01), Noble et al.
patent: 6418050 (2002-07-01), Forbes
patent: 6429065 (2002-08-01), Forbes
patent: 6434041 (2002-08-01), Forbes
patent: 6454912 (2002-09-01), Ahn et al.
patent: 6465298 (2002-10-01), Forbes et al.
patent: 6476434 (2002-11-01), Noble et al.
patent: 6486027 (2002-11-01), Noble et al.
patent: 6486703 (2002-11-01), Noble et al.
patent: 6492233 (2002-12-01), Forbes et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6498065 (2002-12-01), Forbes et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6515510 (2003-02-01), Noble et al.
patent: 6518615 (2003-02-01), Geusic et al.
patent: 6526191 (2003-02-01), Geusic et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6538330 (2003-03-01), Forbes
patent: 6586792 (2003-07-01), Ahn et al.
patent: 6597037 (2003-07-01), Forbes et al.
patent: 6608378 (2003-08-01), Ahn et al.
patent: 6661058 (2003-12-01), Ahn et al.
patent: 6689660 (2004-02-01), Noble et al.
patent: 6709978 (2004-03-01), Geusic et al.
patent: 6723577 (2004-04-01), Geusic et al.
patent: 6746930 (2004-06-01), Yang et al.
patent: 6754108 (2004-06-01), Forbes
patent: 6756298 (2004-06-01), Ahn et al.
patent: 6764901 (2004-07-01), Noble
patent: 6767795 (2004-07-01), Ahn et al.
patent: 6777715 (2004-08-01), Geusic et al.
patent: 6778441 (2004-08-01), Forbes et al.
patent: 6787370 (2004-09-01), Forbes et al.
patent: 6787413 (2004-09-01), Ahn
patent: 6790791 (2004-09-01), Ahn et al.
patent: 6804136 (2004-10-01), Forbes
patent: 6812100 (2004-11-01), Ahn et al.
patent: 6812513 (2004-11-01), Geusic et al.
patent: 6812516 (2004-11-01), Noble, Jr. et al.
patent: 6818937 (2004-11-01), Noble et al.
patent: 6844203 (2005-01-01), Ahn et al.
patent: 6852167 (2005-02-01), Ahn
patent: 6858120 (2005-02-01), Ahn et al.
patent: 6858444 (2005-02-01), Ahn et al.
patent: 6878624 (2005-04-01), Bruley et al.
patent: 6884739 (2005-04-01), Ahn et al.
patent: 6888739 (2005-05-01), Forbes
patent: 6893984 (2005-05-01), Ahn et al.
patent: 6900122 (2005-05-01), Ahn et al.
patent: 6914800 (2005-07-01), Ahn et al.
patent: 6919266 (2005-07-01), Ahn et al.
patent: 6921702 (2005-07-01), Ahn et al.
patent: 6953730 (2005-10-01), Ahn et al.
patent: 6958302 (2005-10-01), Ahn et al.
patent: 6960538 (2005-11-01), Ahn et al.
patent: 7323423 (2008-01-01), Brask et al.
patent: 2002/0086521 (2002-07-01), Ahn et al.
patent: 2002/0086555 (2002-07-01), Ahn et al.
patent: 2002/0089063 (2002-07-01), Ahn et al.
patent: 2002/0122885 (2002-09-01), Ahn
patent: 2002/0130338 (2002-09-01), Ahn et al.
patent: 2002/0167089 (2002-11-01), Ahn et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2002/0192975 (2002-12-01), Ahn
patent: 2003/0008243 (2003-01-01), Ahn et al.
patent: 2003/0020180 (2003-01-01), Ahn et al.
patent: 2003/0042527 (2003-03-01), Forbes et al.
patent: 2003/0043633 (2003-03-01), Forbes et al.
patent: 2003/0043637 (2003-03-01), Forbes et al.
patent: 2003/0045078 (2003-03-01), Ahn et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2003/0048666 (2003-03-01), Eldridge et al.
patent: 2003/0136995 (2003-07-01), Geusic et al.
patent: 2003/0207032 (2003-11-01), Ahn et al.
patent: 2003/0207540 (2003-11-01), Ahn et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2003/0228747 (2003-12-01), Ahn et al.
patent: 2004/0004244 (2004-01-01), Ahn et al.
patent: 2004/0004245 (2004-01-01), Forbes et al.
patent: 2004/0004247 (2004-01-01), Forbes
patent: 2004/0004859 (2004-01-01), Forbes
patent: 2004/0023461 (2004-02-01), Ahn et al.
patent: 2004/0036129 (2004-02-01), Forbes et al.
patent: 2004/0038554 (2004-02-01), Ahn et al.
patent: 2004/0040494 (2004-03-01), Vaartstra et al.
patent: 2004/0041591 (2004-03-01), Forbes
patent: 2004/0043541 (2004-03-01), Ahn
patent: 2004/0043569 (2004-03-01), Ahn
patent: 2004/0094801 (2004-05-01), Liang et al.
patent: 2004/0110348 (2004-06-01), Ahn et al.
patent: 2004/0110391 (2004-06-01), Ahn et al.
patent: 2004/0140513 (2004-07-01), Forbes et al.
patent: 2004/0144980 (2004-07-01), Ahn et al.
patent: 2004/0156578 (2004-08-01), Geusic et al.
patent: 2004/0159863 (2004-08-01), Eldridge et al.
patent: 2004/0164357 (2004-08-01), Ahn et al.
patent: 2004/0175882 (2004-09-01), Ahn et al.
patent: 2004/0183108 (2004-09-01), Ahn
patent: 2004/0185654 (2004-09-01), Ahn
patent: 2004/0214399 (2004-10-01), Ahn et al.
patent: 2004/0219783 (2004-11-01), Ahn et al.
patent: 2004/0222476 (2004-11-01), Ahn et al.
patent: 2004/0233010 (2004-11-01), Akram et al.
patent: 2004/0262700 (2004-12-01), Ahn et al.
patent: 2005/0009370 (2005-01-01), Ahn
patent: 2005/0020017 (2005-01-01), Ahn et al.
patent: 2005/0023574 (2005-02-01), Forbes et al.
patent: 2005/0023594 (2005-02-01), Ahn et al.
patent: 2005/0023595 (2005-02-01), Forbes et al.
patent: 2005/0023602 (2005-02-01), Forbes et al.
patent: 2005/0023603 (2005-02-01), Eldridge et al.
patent: 2005/0023624 (2005-02-01), Ahn et al.
patent: 2005/0023625 (2005-02-01), Ahn et al.
patent: 2005/0023626 (2005-02-01), Ahn et al.
patent: 2005/0024092 (2005-02-01), Forbes
patent: 2005/0026349 (2005-02-01), Forbes et al.
patent: 2005/0026360 (2005-02-01), Geusic et al.
patent: 2005/0029547 (2005-02-01), Ahn et al.
patent: 2005/0029604 (2005-02-01), Ahn et al.
patent: 2005/0029605 (2005-02-01), Ahn et al.
patent: 2005/0030825 (2005-02-01), Ahn
patent: 2005/0032292 (2005-02-01), Ahn et al.
patent: 2005/0032342 (2005-02-01), Forbes et al.
patent: 2005/0037563 (2005-02-01), Ahn
patent: 2005/0054165 (2005-03-01), Ahn et al.
patent: 2005/0070098 (2005-03-01), Bruley
patent: 2005/0077519 (2005-04-01), Ahn et al.
patent: 2005/0087134 (2005-04-01), Ahn
patent: 2005/0124175 (2005-06-01), Ahn et al.
patent: 2005/0138262 (2005-06-01), Forbes
patent: 2005/0140462 (2005-06-01), Akram et al.
patent: 2005/0145957 (2005-07-01), Ahn et al.
patent: 2005/0145959 (2005-07-01), Forbes
patent: 2005/0158973 (2005-07-01), Ahn et al.
patent: 2005/0164521 (2005-07-01), Ahn et al.
patent: 2005/0215015 (2005-09-01), Ahn et al.
patent: 2005/0218462 (2005-10-01), Ahn et al.
patent: 2005/0227442 (2005-10-01), Ahn et al.
Pan et al.“High quality Ultrathin CoTiO3 High-k Gate Dielectrics”, Electrochemical and Solid-State letters 3, 433-434, (2000).
Duenas et al. “Interface Quality of High-Pressure Reactive Sputterd and Atomic Layer Deposited Titanium oxide Thin Films on Silicon”, IEEE Transaction, Spanish Conference on Electronic Devices, Feb. 2-4, 2005, pp. 49-52.
Ritala et al., “Atomic layer epitaxy-a valuable tool for nanotechnology?”, Nanotechnology 10, (1999), pp. 19-24.
Puurunen, “Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/wafer process,”J.Appl.Phys. 97, 121301, 2005.
Aarik, Jaan , et al., “Atomic layer growth of epitaxial TiO/sub 2/ thin films from TiCI/sub 4/ and H/sub 2/O on alpha -AI/sub 2/O/sub 3/ substrates”,Journal of Crystal Growth, 242(1-2), (2002), 189-198.
Chao, Tien-Sheng , et al., “CoTiO3 High-K Dielectrics on HSG for DRAM Applications”,IEEE Transactions on Electron Devices, vol. 51, No. 12, (Dec. 2004), 2200-2204.
Ichinose, Hiromichi , et al., “Deposition of LaMO3 (M = Co, Cr, AI) foms by spray pyrolysis in inductively coupled plasma”,Jour

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