Cobalt silicide formation method employing wet chemical...

Details Cobalt silicide formation method employing wet chemical... Cobalt silicide formation method employing wet chemical...

2005-02-01

2005-02-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S682000, C438S755000

Reexamination Certificate

active

06849543

ABSTRACT:
A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate and the silicon substrate/cobalt material layer laminate is thermally annealed to form a cobalt silicide layer. Use of the wet chemical oxidant material for treating the silicon substrate provides the cobalt silicide layer with enhanced electrical properties.

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Chang et al, ULSI Technology, McGraw-Hill, 1996, pp. 397-402.
Wang et al, “New CoSi2Salicide Technology for 0.1 μm Process and Below”, 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 17-18.
Tung et al, “Increased Uniformity and Thermal Stability of CoSi2Thin Films by Ti Capping”, Appl. Phys. Lett., 67 (15), Oct. 9, 1995, pp. 2164-2166.
Sohn et al, “High Thermal Stability and Low Junction Leakage Current of Ti Capped Co Salicide and . . . Devices”, IEDM 98-1005 to 98-1008.

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