Cobalt silicidation using tungsten nitride capping layer

Details Cobalt silicidation using tungsten nitride capping layer Cobalt silicidation using tungsten nitride capping layer

1999-06-02

2000-07-04

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438592, 438649, 438683, 438902, H01L 213205

Patent

active

060838175

ABSTRACT:
A substantially inert capping layer of tungsten nitride is deposited on cobalt layers prior to silicidation, thereby avoiding any substantial interaction with cobalt. The tungsten nitride capping layer also functions as a diffusion barrier preventing oxygen from reaching the silicidation area. The resulting cobalt silicides layer exhibit lower resistivity than those formed employing a titanium capping layer. Embodiments include rapid thermal annealing to initially form a layer of cobalt monosilicide consuming a portion of the cobalt layer, removing the tungsten nitride and unreacted cobalt layer, and rapid thermal annealing again to convert the cobalt monosilicide layer to a low resistivity layer of cobalt disilicide.

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patent: 5780362 (1998-07-01), Wang et al.
patent: 5911114 (1999-06-01), Naem
patent: 5973300 (1999-08-01), Sekine et al.

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