Cobalt silicidation process for substrates with a...

Details Cobalt silicidation process for substrates with a... Cobalt silicidation process for substrates with a...

2007-04-10

2007-04-10

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000, C438S705000, C438S933000, C257SE21220, C257SE21207

Reexamination Certificate

active

10710012

ABSTRACT:
A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.

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