Cobalt/nickel bi-layer silicide process for very narrow line...

Details Cobalt/nickel bi-layer silicide process for very narrow line... Cobalt/nickel bi-layer silicide process for very narrow line...

2006-09-12

2006-09-12

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S299000, C438S655000

Reexamination Certificate

active

07105439

ABSTRACT:
A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt
ickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.

REFERENCES:
patent: 5047367 (1991-09-01), Wei et al.
patent: 5818092 (1998-10-01), Bai et al.
patent: 5922516 (1999-07-01), Yu et al.
patent: 6121138 (2000-09-01), Wieczorek et al.
patent: 6265271 (2001-07-01), Thei et al.
patent: 6387767 (2002-05-01), Besser et al.
patent: 6399494 (2002-06-01), Nagata
patent: 6509265 (2003-01-01), DeHaven et al.
patent: 6534871 (2003-03-01), Maa et al.
Wang et al. [“Novel Co/Ni Bi-layer Salicidation for 45 nm Gate Technology”, Symposium on VLSI Technology Digest of Technical Paper, Jun. 10-12, 2003, pp. 157-158].
Mo et al. [“Formation and properties of ternary silicide (CoxNi1-x)Si2 thin films”, Solid-State and Integrated Circuit Technology, 1998, Proceedings 1998 5th International Conference, pp. 271-274].

Affiliated with

Also associated with

Rating

Cobalt/nickel bi-layer silicide process for very narrow line... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cobalt/nickel bi-layer silicide process for very narrow line..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cobalt/nickel bi-layer silicide process for very narrow line... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3575397