CMP slurry compositions for oxide films and methods for...

Details CMP slurry compositions for oxide films and methods for... CMP slurry compositions for oxide films and methods for...

2006-03-28

2006-03-28

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S693000, C252S079200, C252S079300

Reexamination Certificate

active

07018924

ABSTRACT:
CMP slurries for oxide film and a method for forming a metal line contact plug of a semiconductor device are described herein. When a polishing process of a multi-layer film is performed by using the disclosed CMP slurry for oxide film including an HXOncompound (wherein n is an integer from 1 to 4), a stable landing plug poly can be formed by preventing step differences by reducing interlayer polishing speed differences.

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Suzumura et al., “Composition for Polishing,” English Translation of JP 11-80708 A, JPO, Mar. 26, 1999.
Notice of Rejection from Korean Intellectual Property Office, Jun. 18, 2004 (4 pages).

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