CMP slurry additive for foreign matter detection

Details CMP slurry additive for foreign matter detection CMP slurry additive for foreign matter detection

2005-02-22

2005-02-22

Deo, Duy-Vu N. (Department: 1765)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C438S693000

Reexamination Certificate

active

06857434

ABSTRACT:
A method and structure polishes and cleans silicon wafers by mixing a marker with a slurry to form a slurry mixture, performs chemical mechanical polishing on a silicon wafer using the slurry mixture, rinses the slurry mixture from the silicon wafer, checks the silicon wafer for marker residue, and repeats the rinsing process if the checking process detects the marker residue on the wafer.

REFERENCES:
patent: 3443092 (1969-05-01), Carr-Brion et al.
patent: 5320706 (1994-06-01), Blackwell
patent: 5483568 (1996-01-01), Yano et al.
patent: 5679169 (1997-10-01), Gonzales et al.
patent: 5704987 (1998-01-01), Huynh et al.
patent: 5807605 (1998-09-01), Tingey et al.
patent: 5922606 (1999-07-01), Jenkins et al.
patent: 6375791 (2002-04-01), Chiesl et al.
patent: 6569690 (2003-05-01), Houge et al.
Burke, P., et al., “Evaluation of Contaminant-Induced Charge from Oxide Chemical-Mechanical Polish”, Proceedings of the SPIE—The International Society for Optical Engineering Conference, Title: Proc. SPIE—Int. Soc. Opt. Eng. (USA), vol. 2638, p. 27-37, 1995.

Affiliated with

Also associated with

Rating

CMP slurry additive for foreign matter detection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMP slurry additive for foreign matter detection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMP slurry additive for foreign matter detection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3445250