CMP process leaving no residual oxide layer or slurry particles

Details CMP process leaving no residual oxide layer or slurry particles CMP process leaving no residual oxide layer or slurry particles

2006-10-24

2006-10-24

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C257SE21304

Reexamination Certificate

active

07125802

ABSTRACT:
Two problems seen in CMP as currently executed are a tendency for slurry particles to remain on the surface and the formation of a final layer of oxide. These problems have been solved by adding to the slurry a quantity of TMAH or TBAH. This has the effect of rendering the surface being polished hydrophobic. In that state a residual layer of oxide will not be left on the surface at the conclusion of CMP. Nor will many slurry abrasive particles remain cling to the freshly polished surface. Those that do are readily removed by a simple rinse or buffing. As an alternative, the CMP process may be performed in three stages—first convention CMP, then polishing in a solution of TMAH or TBAH, and finally a gentle rinse or buffing.

REFERENCES:
patent: 5509971 (1996-04-01), Kirschner
patent: 5662769 (1997-09-01), Schonauer et al.
patent: 5704987 (1998-01-01), Huynh et al.
patent: 5868863 (1999-02-01), Hymes et al.
patent: 5968280 (1999-10-01), Ronay
patent: 6165956 (2000-12-01), Zhang et al.
patent: 6207630 (2001-03-01), Vaartstra
patent: 6358325 (2002-03-01), Andreas
patent: 6468951 (2002-10-01), Grieger et al.
patent: 6693035 (2004-02-01), Sachan et al.
patent: 2003/0143848 (2003-07-01), Steckenrider et al.
patent: 2004/0020134 (2004-02-01), Kim et al.

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