Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-25
2008-03-25
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
11030245
ABSTRACT:
In a CMOS semiconductor device using a silicon germanium gate and a method of fabricating the same, a gate insulating layer, a conductive electrode layer that is a seed layer, a silicon germanium electrode layer, and an amorphous conductive electrode layer are sequentially formed on a semiconductor substrate. A photolithographic process is then carried out to remove the silicon germanium electrode layer in the NMOS region, so that the silicon germanium layer is formed only in the PMOS region and is not formed in the NMOS region.
REFERENCES:
patent: 5773348 (1998-06-01), Wu
patent: 6255149 (2001-07-01), Bensahel et al.
patent: 6281559 (2001-08-01), Yu et al.
patent: 6518106 (2003-02-01), Ngai et al.
patent: 6555879 (2003-04-01), Krivokapic et al.
patent: 6589827 (2003-07-01), Kubo et al.
patent: 6642112 (2003-11-01), Lowe et al.
patent: 6710382 (2004-03-01), Kubo et al.
patent: 6821559 (2004-11-01), Eberspacher et al.
patent: 6855641 (2005-02-01), Ryu et al.
patent: 2001/0015922 (2001-08-01), Ponomarev
patent: 2002/0019101 (2002-02-01), Kubo et al.
patent: 2004/0012055 (2004-01-01), Rhee et al.
patent: 2002-043566 (2002-02-01), None
patent: WO 01/61749 (2001-08-01), None
Liu et al. “Microstructure Observation of p-MOSFET Device.” Chinese Journal of Electronics 6.1 (1997): pp. 47-51.
Kang Hee-Sung
Kim Young-Wug
Oh Chang-Bong
Ryu Hyuk-Ju
Chan Candice Y
Jr. Carl Whitehead
Mills & Onello LLP
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