CMOS transistor and method of manufacturing the same

Details CMOS transistor and method of manufacturing the same CMOS transistor and method of manufacturing the same

2008-01-01

2008-01-01

Chen, Jack (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S069000, C257S204000, C257S357000

Reexamination Certificate

active

07315063

ABSTRACT:
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.

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patent: 10-2003-0082538 (2003-10-01), None

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