CMOS transistor and method of manufacturing the same

Details CMOS transistor and method of manufacturing the same CMOS transistor and method of manufacturing the same

2011-08-09

2011-08-09

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S066000, C257S072000, C257S369000, C257S386000, C257SE27062

Reexamination Certificate

active

07994581

ABSTRACT:
In a complementary metal-oxide semiconductor (CMOS) transistor and a method of manufacturing the same, a semiconductor channel material having a first conductivity type is provided on a substrate. A first transistor having the first conductivity type and a second transistor having a second conductivity type are positioned on the substrate, respectively. The first transistor includes a first gate positioned on a first surface of the channel material through a medium of a gate insulation layer and a pair of ohmic contacts positioned on a second surface of the channel material and crossing over both side portions of the first gate electrode, respectively. The second transistor includes a second gate positioned on the first surface of the channel material through a medium of the gate insulation layer and a pair of Schottky contacts positioned on the second surface of the channel material and crossing over both side portions of the second gate electrode, respectively.

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patent: 7749825 (2010-07-01), Honda
patent: 10-098371 (1998-04-01), None

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