CMOS semiconductor device and method of fabricating the same

Details CMOS semiconductor device and method of fabricating the same CMOS semiconductor device and method of fabricating the same

2011-04-05

2011-04-05

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21636, C257SE29001, C438S199000

Reexamination Certificate

active

07919820

ABSTRACT:
Example embodiments provide a complementary metal-oxide semiconductor (CMOS) semiconductor device and a method of fabricating the CMOS semiconductor device. The CMOS semiconductor device may include gates in the nMOS and pMOS areas, polycrystalline silicon (poly-Si) capping layers, metal nitride layers underneath the poly-Si capping layers, and a gate insulating layer underneath the gate. The metal nitride layers of the nMOS and pMOS areas may be formed of the same type of material and may have different work functions. Since a metal gate is formed of identical types of metal nitride layers, a process may be simplified, yield may be increased, and a higher-performance CMOS semiconductor device may be obtained.

REFERENCES:
patent: 6537901 (2003-03-01), Cha et al.
patent: 2004/0087091 (2004-05-01), Setton
patent: 2004/0180487 (2004-09-01), Eppich et al.
patent: 2006/0040439 (2006-02-01), Park et al.
patent: 10-2004-0003211 (2004-01-01), None
Office Action dated Jul. 21, 2008 from the Korean Patent Office for a counterpart application, KR 10-2007-0020593.
Chinese Office Action dated Oct. 25, 2010 for corresponding Chinese Application No. 200810080578.7 and English translation thereof.

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