Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-09-30
1995-08-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257786, 257207, 327437, 327410, H01L 29772, H03K 17695
Patent
active
054422183
ABSTRACT:
A CMOS motor drive for a disk drive spindle motor. The design of the drive circuit permits the integration of power electronics together with logic or other circuitry on a single integrated circuit wafer. For each motor phase the power electronics formed on the integrated circuit wafer includes a plurality of P-type and N-type MOSFET power transistor pairs and a plurality of corresponding output bonding pads; the drain terminals of each transistor pair being connected together to its corresponding output bonding pad. The wafer is enclosed in packaging which includes an output pin for providing an electrical connection to one phase of the disk drive spindle motor, and a plurality of bond wires corresponding to the plurality of output bonding pads, each bond wire providing an electrical connection between its corresponding bonding pad and the output pin. The transistor pairs and bond wires operate in parallel, each carrying an equivalent portion of the total current output presented at the output pin. The gate terminals of all the P-type MOSFET transistors are electrically connected together to a first control input; and the gate terminals of all the N-type MOSFET transistors are electrically connected together to a second control input. The source terminals of each of the P-type transistors are connected through corresponding bonding pads and bond wires to a first voltage source input pin. Similarly, the source terminals of each of the N-type transistors are connected through corresponding bonding pads and bond wires to a second voltage source input pin.
REFERENCES:
patent: 5060048 (1991-10-01), Hebenstreit et al.
Bartlett Donald M.
Bitting Ricky F.
Patella James F.
Seidel Durbin L.
AT&T Global Information Solutions Company
Brown Peter Toby
Hyundai Electronics America
Mintel William
Stover James M.
LandOfFree
CMOS power fet driver including multiple power MOSFET transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CMOS power fet driver including multiple power MOSFET transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS power fet driver including multiple power MOSFET transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2184034