CMOS integrated circuit having PMOS and NMOS devices with differ

Details CMOS integrated circuit having PMOS and NMOS devices with differ CMOS integrated circuit having PMOS and NMOS devices with differ

1998-03-30

2000-04-11

Fahmy, Wael M.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438770, 438775, H01L 218234

Patent

active

060487690

ABSTRACT:
A CMOS integrated circuit having a PMOS and NMOS device with different gate dielectric layers. According to the present invention, an NMOS transistor is formed on a p-type conductivity region of a semiconductor substrate. The NMOS transistor has first gate dielectric layer formed on the p-type conductivity region. A PMOS transistor is formed on a n-type conductivity region of the semiconductor substrate. The PMOS transistor has a second gate dielectric layer wherein the second gate dielectric layer has a different composition than the first gate dielectric layer.

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