Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-14
2010-02-09
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27133, C257SE31038
Reexamination Certificate
active
07659564
ABSTRACT:
A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
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Adkisson James W.
Ellis-Monaghan John J.
Jaffe Mark D.
Pearson Dale J.
Rogers Dennis L.
Canale Anthony J.
Gurley Lynne A.
International Business Machines - Corporation
Matthews Colleen A
Scully , Scott, Murphy & Presser, P.C.
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