CMOS image sensor providing uniform pixel exposure and...

Details CMOS image sensor providing uniform pixel exposure and... CMOS image sensor providing uniform pixel exposure and...

2008-03-11

2008-03-11

Nguyen, Van Thu (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S230000

Reexamination Certificate

active

07342271

ABSTRACT:
An CMOS image sensor includes a photodiode region generating electrical charges in response to incident light received thereat. In one example, the CMOS image sensor further includes first and second transfer gates adapted to prevent or substantially prevent the electrical charges from overflowing into a floating diffusion region or a storage diffusion region located on opposite sides of the photodiode region. In this example, a read diffusion region is formed in the semiconductor substrate on an opposite side of the storage diffusion region relative to the photodiode region and a reset diffusion region is formed in the semiconductor substrate on an opposite side of the floating diffusion region relative to the photodiode region. The read diffusion region may be electrically connected to the floating diffusion region by a connection line.

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patent: 2004-111590 (2004-04-01), None

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