CMOS image sensor having thiophene derivatives

Details CMOS image sensor having thiophene derivatives CMOS image sensor having thiophene derivatives

2008-03-24

2010-10-19

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S040000, C257S290000, C257S292000, C257S293000, C257SE27133, C257SE27134, C257SE27135

Reexamination Certificate

active

07816713

ABSTRACT:
Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.

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patent: 2008/0283881 (2008-11-01), Lee

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