CMOS image sensor and method of manufacturing the same

Details CMOS image sensor and method of manufacturing the same CMOS image sensor and method of manufacturing the same

2005-12-30

2008-08-19

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S204000, C257SE21632, C257SE27046

Reexamination Certificate

active

07413944

ABSTRACT:
In a CMOS image sensor manufacturing process, heavily doped p type impurity ions (for example, B) are implanted in a dummy moat region when the heavily doped p type impurity ions is implanted in a PMOS transistor region, so that metal ion contamination is removed. Accordingly, a CMOS image sensor capable of reducing a leakage current by gettering metal ion contamination is provided.

REFERENCES:
patent: 6498357 (2002-12-01), Ker et al.

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