CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2006-07-24

2009-08-11

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE27131, C257SE27133

Reexamination Certificate

active

07573082

ABSTRACT:
A CMOS image sensor and a method of fabricating the same are provided. In the CMOS image sensor, a device isolation layer is formed in a substrate to define an active region, and a photodiode is formed in the active region. A floating diffusion region is formed at a position spaced apart from the photodiode, and first and second gates are overlapped with one end of the photodiode and one end of the floating diffusion region, respectively. A third gate is disposed between the first gate and the second gate and overlapped with an upper portion of the device isolation layer and a predetermined portion of the floating diffusion region. An insulating layer is formed on the resulting structure where the third gate is formed. A buried contact has a first contact and a second contact, which are sequentially stacked to pass through the insulating layer and the third gate and to connect the third gate to the floating diffusion region disposed under the third gate.

REFERENCES:
patent: 2005/0012124 (2005-01-01), Rhodes
patent: 2005/0032281 (2005-02-01), McClure
patent: 2005/0077554 (2005-04-01), Rhodes
patent: 2006/0273354 (2006-12-01), Choi et al.
patent: 2006/0273355 (2006-12-01), Han
patent: 2007/0085119 (2007-04-01), Jeon
patent: 2001-210815 (2001-03-01), None
patent: 2002-118249 (2002-04-01), None

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