CMOS image sensor and method of fabricating the same

Details CMOS image sensor and method of fabricating the same CMOS image sensor and method of fabricating the same

2006-06-06

2006-06-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07057219

ABSTRACT:
A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.

REFERENCES:
patent: 6740915 (2004-05-01), Rhodes
patent: 2003/0234432 (2003-12-01), Song et al.
English Abstract***.

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